High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate

We report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of ultraviolet (UV) light absorption. The finite-difference time-domain (FDTD) method is used for PD simulation under normal incidence of UV radiation....

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Published in:IEEE sensors journal Vol. 24; no. 5; pp. 6006 - 6013
Main Authors: Jangra, Richa, Mishra, Satyendra K., Sharma, Anuj K.
Format: Journal Article
Language:English
Published: New York IEEE 01.03.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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ISSN:1530-437X, 1558-1748
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Abstract We report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of ultraviolet (UV) light absorption. The finite-difference time-domain (FDTD) method is used for PD simulation under normal incidence of UV radiation. The results indicate that with Si-Ag-Gr PD design, an Al2O3 layer (15-nm thick) considerably increases the absorption causing greater magnitudes of quantum efficiency (<inline-formula> <tex-math notation="LaTeX">\eta {)} </tex-math></inline-formula> and responsivity (<inline-formula> <tex-math notation="LaTeX">\rho {)} </tex-math></inline-formula> in the ultraviolet B (UVB) region (wavelength range: 280-320 nm). In terms of magnitudes, the Si-Ag-Gr-Al2O3 (15 nm) PD design operating at 296.06-nm wavelength (<inline-formula> <tex-math notation="LaTeX">\lambda _{{0}}{)} </tex-math></inline-formula> achieves <inline-formula> <tex-math notation="LaTeX">\eta </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\rho </tex-math></inline-formula> as large as 0.628 and 0.149 A/W, respectively. At <inline-formula> <tex-math notation="LaTeX">\lambda _{{0}} </tex-math></inline-formula> = 296.06 nm, the magnitude of photocurrent (<inline-formula> <tex-math notation="LaTeX">{I}_{p}{)} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">64 ~\mu \text{A} </tex-math></inline-formula> and the UV-to-visible rejection ratio (<inline-formula> <tex-math notation="LaTeX">{R}_{r}{)} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">0.4\times 10^{{2}} </tex-math></inline-formula>. Furthermore, the use of reduced graphene oxide (rGO) is explored to operate the PD in the ultraviolet A (UVA) region (wavelength range: 320-370 nm) with equally high performance. The simulation results indicate that Si-Ag-rGO-Al2O3 (1 nm) PD design operating at 336.86-nm wavelength provides <inline-formula> <tex-math notation="LaTeX">\eta </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\rho </tex-math></inline-formula> as large as 0.586 and 0.159 A/W, respectively. At <inline-formula> <tex-math notation="LaTeX">\lambda _{{0}} </tex-math></inline-formula> = 336.86 nm, the magnitude of <inline-formula> <tex-math notation="LaTeX">{I}_{p} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">68.23 ~\mu \text{A} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{R}_{r} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">0.26\times 10^{{2}} </tex-math></inline-formula> for this PD. These UVA- and UVB-specific PD designs (particularly, Gr-based with 99.6% absorption in the UVB region) possess exceptionally large magnitudes of absorbance, which is an indicator of the perfect absorber behavior of the proposed multilayer designs. The proposed PD design can provide superior responsivity compared to recently reported UV PDs.
AbstractList We report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of ultraviolet (UV) light absorption. The finite-difference time-domain (FDTD) method is used for PD simulation under normal incidence of UV radiation. The results indicate that with Si-Ag-Gr PD design, an Al2O3 layer (15-nm thick) considerably increases the absorption causing greater magnitudes of quantum efficiency ([Formula Omitted] and responsivity ([Formula Omitted] in the ultraviolet B (UVB) region (wavelength range: 280–320 nm). In terms of magnitudes, the Si-Ag-Gr-Al2O3 (15 nm) PD design operating at 296.06-nm wavelength ([Formula Omitted] achieves [Formula Omitted] and [Formula Omitted] as large as 0.628 and 0.149 A/W, respectively. At [Formula Omitted] = 296.06 nm, the magnitude of photocurrent ([Formula Omitted] is [Formula Omitted] and the UV-to-visible rejection ratio ([Formula Omitted] is [Formula Omitted]. Furthermore, the use of reduced graphene oxide (rGO) is explored to operate the PD in the ultraviolet A (UVA) region (wavelength range: 320–370 nm) with equally high performance. The simulation results indicate that Si-Ag-rGO-Al2O3 (1 nm) PD design operating at 336.86-nm wavelength provides [Formula Omitted] and [Formula Omitted] as large as 0.586 and 0.159 A/W, respectively. At [Formula Omitted] = 336.86 nm, the magnitude of [Formula Omitted] is [Formula Omitted] and [Formula Omitted] is [Formula Omitted] for this PD. These UVA- and UVB-specific PD designs (particularly, Gr-based with 99.6% absorption in the UVB region) possess exceptionally large magnitudes of absorbance, which is an indicator of the perfect absorber behavior of the proposed multilayer designs. The proposed PD design can provide superior responsivity compared to recently reported UV PDs.
We report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of ultraviolet (UV) light absorption. The finite-difference time-domain (FDTD) method is used for PD simulation under normal incidence of UV radiation. The results indicate that with Si-Ag-Gr PD design, an Al2O3 layer (15-nm thick) considerably increases the absorption causing greater magnitudes of quantum efficiency (<inline-formula> <tex-math notation="LaTeX">\eta {)} </tex-math></inline-formula> and responsivity (<inline-formula> <tex-math notation="LaTeX">\rho {)} </tex-math></inline-formula> in the ultraviolet B (UVB) region (wavelength range: 280-320 nm). In terms of magnitudes, the Si-Ag-Gr-Al2O3 (15 nm) PD design operating at 296.06-nm wavelength (<inline-formula> <tex-math notation="LaTeX">\lambda _{{0}}{)} </tex-math></inline-formula> achieves <inline-formula> <tex-math notation="LaTeX">\eta </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\rho </tex-math></inline-formula> as large as 0.628 and 0.149 A/W, respectively. At <inline-formula> <tex-math notation="LaTeX">\lambda _{{0}} </tex-math></inline-formula> = 296.06 nm, the magnitude of photocurrent (<inline-formula> <tex-math notation="LaTeX">{I}_{p}{)} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">64 ~\mu \text{A} </tex-math></inline-formula> and the UV-to-visible rejection ratio (<inline-formula> <tex-math notation="LaTeX">{R}_{r}{)} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">0.4\times 10^{{2}} </tex-math></inline-formula>. Furthermore, the use of reduced graphene oxide (rGO) is explored to operate the PD in the ultraviolet A (UVA) region (wavelength range: 320-370 nm) with equally high performance. The simulation results indicate that Si-Ag-rGO-Al2O3 (1 nm) PD design operating at 336.86-nm wavelength provides <inline-formula> <tex-math notation="LaTeX">\eta </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">\rho </tex-math></inline-formula> as large as 0.586 and 0.159 A/W, respectively. At <inline-formula> <tex-math notation="LaTeX">\lambda _{{0}} </tex-math></inline-formula> = 336.86 nm, the magnitude of <inline-formula> <tex-math notation="LaTeX">{I}_{p} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">68.23 ~\mu \text{A} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{R}_{r} </tex-math></inline-formula> is <inline-formula> <tex-math notation="LaTeX">0.26\times 10^{{2}} </tex-math></inline-formula> for this PD. These UVA- and UVB-specific PD designs (particularly, Gr-based with 99.6% absorption in the UVB region) possess exceptionally large magnitudes of absorbance, which is an indicator of the perfect absorber behavior of the proposed multilayer designs. The proposed PD design can provide superior responsivity compared to recently reported UV PDs.
Author Jangra, Richa
Sharma, Anuj K.
Mishra, Satyendra K.
Author_xml – sequence: 1
  givenname: Richa
  surname: Jangra
  fullname: Jangra, Richa
  organization: Department of Applied Sciences (Physics Division), National Institute of Technology Delhi, Delhi, India
– sequence: 2
  givenname: Satyendra K.
  surname: Mishra
  fullname: Mishra, Satyendra K.
  email: smishra@cttc.es
  organization: Space and Resilient Communication Systems (SRCOM), Centre Tecnològic de Telecomunicacions de Catalunya, Barcelona, Spain
– sequence: 3
  givenname: Anuj K.
  orcidid: 0000-0003-4899-7113
  surname: Sharma
  fullname: Sharma, Anuj K.
  email: anujsharma@nitdelhi.ac.in
  organization: Department of Applied Sciences (Physics Division), National Institute of Technology Delhi, Delhi, India
BookMark eNotkM1KAzEUhYMo-PsAgouA66n5NZllKbUqxYq16G7IzNw6kWkyJmmhD-E7G9HVPXA-vgP3FB067wChS0pGlJLy5nE5fRoxwviIc6EUYQfohEqpC6qEPvzNnBSCq_djdBrjJyG0VFKdoO97-9EVLxAH76Ld2bTHqz4Fs7O-h4SfO598Cwma5EPEbzZ1eOo64xrYgEvYr_FiSLYxPR7X0YecvcOraN0HngUzdOAAT_wm2zMesXEtHvdswfHc7CHgDC8tXm7rmDcTnKOjtekjXPzfM7S6m75O7ov5YvYwGc8Ly4RKxW1NpSLrUkHNasWEbkui61qAJLQpDedGUgqtFiZXSuX_lGvKNSW6lForys_Q9Z93CP5rCzFVn34bXJ6sWMmZVEIKlamrP8oCQDUEuzFhX1GSTbdE8R9Y5HGu
CODEN ISJEAZ
ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024
DBID 97E
RIA
RIE
7SP
7U5
8FD
L7M
DOI 10.1109/JSEN.2023.3347702
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005–Present
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE/IET Electronic Library
Electronics & Communications Abstracts
Solid State and Superconductivity Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle Solid State and Superconductivity Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
Electronics & Communications Abstracts
DatabaseTitleList Solid State and Superconductivity Abstracts

Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Xplore Digital Libary (IEL)
  url: https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Geography
Engineering
EISSN 1558-1748
EndPage 6013
ExternalDocumentID 10381607
Genre orig-research
GrantInformation_xml – fundername: Junior Research Fellowship through the Ministry of Education, Government of India
GroupedDBID -~X
0R~
29I
4.4
5GY
6IK
97E
AAJGR
AARMG
AASAJ
AAWTH
ABAZT
ABQJQ
ABVLG
ACGFO
ACGFS
ACIWK
AENEX
AGQYO
AHBIQ
AJQPL
AKJIK
AKQYR
ALMA_UNASSIGNED_HOLDINGS
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
EBS
F5P
HZ~
IFIPE
IPLJI
JAVBF
LAI
M43
O9-
OCL
P2P
RIA
RIE
RNS
TWZ
7SP
7U5
8FD
L7M
ID FETCH-LOGICAL-i247t-6b1570f97eb2b7248d908bb4e501c9a33a511ed84a48d771099f1381089588713
IEDL.DBID RIE
ISICitedReferencesCount 9
ISICitedReferencesURI http://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=Summon&SrcAuth=ProQuest&DestLinkType=CitingArticles&DestApp=WOS_CPL&KeyUT=001280078600001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
ISSN 1530-437X
IngestDate Mon Jun 30 08:21:36 EDT 2025
Wed Aug 27 02:08:38 EDT 2025
IsDoiOpenAccess false
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 5
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i247t-6b1570f97eb2b7248d908bb4e501c9a33a511ed84a48d771099f1381089588713
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ORCID 0000-0003-4899-7113
OpenAccessLink https://doi.org/10.1109/JSEN.2023.3347702
PQID 2932574547
PQPubID 75733
PageCount 8
ParticipantIDs proquest_journals_2932574547
ieee_primary_10381607
PublicationCentury 2000
PublicationDate 2024-03-01
PublicationDateYYYYMMDD 2024-03-01
PublicationDate_xml – month: 03
  year: 2024
  text: 2024-03-01
  day: 01
PublicationDecade 2020
PublicationPlace New York
PublicationPlace_xml – name: New York
PublicationTitle IEEE sensors journal
PublicationTitleAbbrev JSEN
PublicationYear 2024
Publisher IEEE
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
SSID ssj0019757
Score 2.4425929
Snippet We report on high-responsivity photodetector (PD) designs with Si substrate, Ag layer, graphene (Gr) components, and Al2O3 layer through enhancement of...
SourceID proquest
ieee
SourceType Aggregation Database
Publisher
StartPage 6006
SubjectTerms Absorption
Aluminum oxide
Electromagnetic absorption
Finite difference methods
Finite difference time domain method
Graphene
graphene (Gr)
Multilayers
Optical reflection
Optical sensors
photodetector (PD)
Photoelectric effect
Photometers
Quantum efficiency
responsivity
Silicon
Silicon substrates
Substrates
ultraviolet (UV)
Ultraviolet detectors
Ultraviolet radiation
Title High-Responsivity Ultraviolet Photodetectors With Enhancement of Optical Absorption Using Graphene Components and Al2O3 Layer on Si Substrate
URI https://ieeexplore.ieee.org/document/10381607
https://www.proquest.com/docview/2932574547
Volume 24
WOSCitedRecordID wos001280078600001&url=https%3A%2F%2Fcvtisr.summon.serialssolutions.com%2F%23%21%2Fsearch%3Fho%3Df%26include.ft.matches%3Dt%26l%3Dnull%26q%3D
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVIEE
  databaseName: IEEE Xplore Digital Libary (IEL)
  customDbUrl:
  eissn: 1558-1748
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0019757
  issn: 1530-437X
  databaseCode: RIE
  dateStart: 20010101
  isFulltext: true
  titleUrlDefault: https://ieeexplore.ieee.org/
  providerName: IEEE
link http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LS8QwEA66COrBt7i-mIPXrG2TNMlxkVURWcXn3pakTdmFpZXdKvgj_M9mslUE8eCt0ISEmeTrdOabGUJOVGpMrpWgzgpLuWYRVcIIqrhTjiXGxqEP2dO17PfVYKBvm2T1kAvjnAvkM9fBxxDLz6vsFV1lp3EIc2Hu-KKU6TxZ6ztkoGUo6-lvcEQ5k4MmhBlH-vTqvtfvYJ_wDmNcSnShhFYqv_A3fFTO1_-5nQ2y1liP0J2re5MsuHKLrP6oKbhFlpu25qP3bfKBLA5619BgsUsEPE7qqQnR-BpuR1Vd5a4OjvsZPI_rEfTKEZ4DXBmqAm5egq8bunZWTQO6QCAZwAUu4XESEFCqEukYYMocupPkhsG18ZY8-MH3Y0BoCiVwd8jjee_h7JI2_RfoOOGypqlXlIwKLf3ft5UJV7mOlLXciSjOtGHMeGvN5Yob_0oiqVMXMVYMU1p47IrZLmmVfgd7BLRICmt0lvohXFmhvOjSLMm0y0QhItcmOyjf4cu8xMbwS7RtcviloWFzuWZDb6F4oMFKZPt_TDsgK17dfM4VOyStevrqjshS9laPZ9PjcG4-Af5gwr0
linkProvider IEEE
linkToHtml http://cvtisr.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LT-MwELYQILEcgGVZLVBgDlxdktiu7WOFWl7dgnhtb5GdOGollKA2IPEj-M943ICQEIe9RYotWzP2l8nMNzOEHKqOMblWgjorLOWaRVQJI6jiTjmWGBuHPmT3AzkcqtFIXzXJ6iEXxjkXyGeujY8hlp9X2RO6yo7iEObC3PElwXkSzdO1PoIGWobCnv4OR5QzOWqCmHGkj85vesM2dgpvM8alRCdKaKbyBYHDZ6W__p8b2iBrjf0I3bnCf5IFV26S1U9VBTfJStPYfPzyi7wij4NeN0RY7BMBdw_11IR4fA1X46quclcH1_0M_k3qMfTKMZ4EXBmqAi4fg7cbunZWTQO-QKAZwAku4ZESEFKqEgkZYMocug_JJYOB8bY8-ME3E0BwCkVwt8hdv3d7fEqbDgx0knBZ045XlYwKLf3_t5UJV7mOlLXciSjOtGHMeHvN5Yob_0oirVMXMdYMU1p49IrZb7JY-h38IaBFUlijs44fwpUVyouukyWZdpkoROS2yRbKN32cF9lI30W7TVrvGkqb6zVLvY3ioQZrke18M-2ArJze_h2kg7PhxS754VXP58yxFlmsp09ujyxnz_VkNt0PZ-gNSJHGBA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=High-Responsivity+Ultraviolet+Photodetectors+With+Enhancement+of+Optical+Absorption+Using+Graphene+Components+and+Al2O3+Layer+on+Si+Substrate&rft.jtitle=IEEE+sensors+journal&rft.au=Jangra%2C+Richa&rft.au=Mishra%2C+Satyendra+K&rft.au=Sharma%2C+Anuj+K&rft.date=2024-03-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=1530-437X&rft.eissn=1558-1748&rft.volume=24&rft.issue=5&rft.spage=6006&rft_id=info:doi/10.1109%2FJSEN.2023.3347702&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1530-437X&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1530-437X&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1530-437X&client=summon