Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response

Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations...

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Veröffentlicht in:	Nano-micro letters Jg. 16; H. 1; S. 213 - 21
Hauptverfasser:	Zeng, Xiaojun, Jiang, Xiao, Ning, Ya, Gao, Yanfeng, Che, Renchao
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Singapore Springer Nature Singapore 01.12.2024 Springer Nature B.V SpringerOpen
Schlagworte:	Absorption Built-in electric field Density functional theory Dielectric polarization Electric fields Electrical junctions Electromagnetic radiation Electromagnetic wave absorption Electron transfer Engineering Heterostructures Impedance matching Iron Metal sulfides Military technology Mott–Schottky junctions MXenes Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Radar cross sections Semiconductor junctions Semiconductor–semiconductor–metal heterostructure Stealth technology Thickness Semiconductor–semiconductor–metal heterostructure Electromagnetic wave absorption Built-in electric field Mott–Schottky junctions Semiconductor junctions
ISSN:	2311-6706, 2150-5551, 2150-5551
Online-Zugang:	Volltext
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