Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response

Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations...

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Vydáno v:	Nano-micro letters Ročník 16; číslo 1; s. 213 - 21
Hlavní autoři:	Zeng, Xiaojun, Jiang, Xiao, Ning, Ya, Gao, Yanfeng, Che, Renchao
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Singapore Springer Nature Singapore 01.12.2024 Springer Nature B.V SpringerOpen
Témata:	Absorption Built-in electric field Density functional theory Dielectric polarization Electric fields Electrical junctions Electromagnetic radiation Electromagnetic wave absorption Electron transfer Engineering Heterostructures Impedance matching Iron Metal sulfides Military technology Mott–Schottky junctions MXenes Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Radar cross sections Semiconductor junctions Semiconductor–semiconductor–metal heterostructure Stealth technology Thickness Semiconductor–semiconductor–metal heterostructure Electromagnetic wave absorption Built-in electric field Mott–Schottky junctions Semiconductor junctions
ISSN:	2311-6706, 2150-5551, 2150-5551
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Shrnutí:	Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures. The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS 2 , metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor–semiconductor–metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo–MXene/Mo–metal sulfides featuring both semiconductor–semiconductor and semiconductor–metal interfaces. The achievements were most pronounced in Mo–MXene/Mo–Sn sulfide, which achieved remarkable reflection loss values of − 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo–metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.
Bibliografie:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23
ISSN:	2311-6706 2150-5551 2150-5551
DOI:	10.1007/s40820-024-01449-7