Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and high-speed writing/reading. Moreover, STT-MRAM is...

Celý popis

Uložené v:

Podrobná bibliografia
Vydané v:	IEEE access Ročník 11; s. 33005 - 33013
Hlavní autori:	Nguyen, Thien An, Lee, Jaejin
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Piscataway IEEE 2023 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Artificial intelligence Bit error rate Cascaded channel model Codes Coding Dynamic random access memory error correction codes (ECCs) Errors Fluctuations Internet of Things Magnetic tunneling Magnetohydrodynamics Modulation modulation coding non-volatile RAM Random access memory Resistance sparse codes spin-torque transfer magnetic random-access memory (STT-MRAM) Torque Tunnel junctions Writing
ISSN:	2169-3536, 2169-3536
On-line prístup:	Získať plný text
Tagy:	Pridať tag Žiadne tagy, Buďte prvý, kto otaguje tento záznam!

Buďte prvý, kto okomentuje tento záznam!