Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and high-speed writing/reading. Moreover, STT-MRAM is...

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Veröffentlicht in:IEEE access Jg. 11; S. 33005 - 33013
Hauptverfasser: Nguyen, Thien An, Lee, Jaejin
Format: Journal Article
Sprache:Englisch
Veröffentlicht: Piscataway IEEE 2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:
Artificial intelligence
Bit error rate
Cascaded channel model
Codes
Coding
Dynamic random access memory
error correction codes (ECCs)
Errors
Fluctuations
Internet of Things
Magnetic tunneling
Magnetohydrodynamics
Modulation
modulation coding
non-volatile RAM
Random access memory
Resistance
sparse codes
spin-torque transfer magnetic random-access memory (STT-MRAM)
Torque
Tunnel junctions
Writing
ISSN:2169-3536, 2169-3536
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Zusammenfassung:In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and high-speed writing/reading. Moreover, STT-MRAM is utilized to replace dynamic random-access memory (DRAM) in Internet of Things (IoT) and artificial intelligence (AI) applications. However, because the magnetic tunnel junction is used to write data, STT-MRAM must face process variation and thermal fluctuation problems. This causes errors in writing and reading processes. These errors are independent of each other. Therefore, to solve them and increase the reliability of STT-MRAM, the data are encoded before storage in STT-MRAM devices. In this study, we propose a method for designing codewords using modulation coding techniques. Our codewords increase the minimum Hamming distance and inheritance of the sparse code characteristic to exploit the asymmetric probability of the write errors. The simulation results show that our codewords can improve the bit error rate performance of STT-MRAM compared with previous works.
Bibliographie:ObjectType-Article-1
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ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2023.3263527