Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding

By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density advantage. However, continuous technology scaling makes MLC NAND flash memories increasingly subject to worse raw storage...

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Bibliographic Details
Published in:IEEE transactions on very large scale integration (VLSI) systems Vol. 18; no. 10; pp. 1412 - 1420
Main Authors: Li, Shu, Zhang, Tong
Format: Journal Article
Language:English
Published: New York, NY IEEE 01.10.2010
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
ISSN:1063-8210, 1557-9999
Online Access:Get full text
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