Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding
By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density advantage. However, continuous technology scaling makes MLC NAND flash memories increasingly subject to worse raw storage...
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| Published in: | IEEE transactions on very large scale integration (VLSI) systems Vol. 18; no. 10; pp. 1412 - 1420 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
New York, NY
IEEE
01.10.2010
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects: | |
| ISSN: | 1063-8210, 1557-9999 |
| Online Access: | Get full text |
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