Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition

Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and therm...

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Veröffentlicht in:	Coatings (Basel) Jg. 12; H. 6; S. 723
Hauptverfasser:	Tsai, Yu-Li, Wu, Chih-Hung
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Basel MDPI AG 01.06.2022
Schlagworte:	Analysis Annealing Buffers Chemical vapor deposition Computational grids Dislocation density Dislocation mobility Epitaxial growth Epitaxy Gallium arsenide Indium Indium gallium arsenides Indium phosphides Intermetallic compounds Lattice parameters Low temperature Metalorganic chemical vapor deposition Methods Microscopy Misfit dislocations Nucleation Optoelectronic devices Photoluminescence Room temperature Structural analysis Substrates Thermal expansion Threading dislocations Taiwan United States > US
ISSN:	2079-6412, 2079-6412
Online-Zugang:	Volltext
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