Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition

Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and therm...

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Vydané v:Coatings (Basel) Ročník 12; číslo 6; s. 723
Hlavní autori: Tsai, Yu-Li, Wu, Chih-Hung
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Basel MDPI AG 01.06.2022
Predmet:
Analysis
Annealing
Buffers
Chemical vapor deposition
Computational grids
Dislocation density
Dislocation mobility
Epitaxial growth
Epitaxy
Gallium arsenide
Indium
Indium gallium arsenides
Indium phosphides
Intermetallic compounds
Lattice parameters
Low temperature
Metalorganic chemical vapor deposition
Methods
Microscopy
Misfit dislocations
Nucleation
Optoelectronic devices
Photoluminescence
Room temperature
Structural analysis
Substrates
Thermal expansion
Threading dislocations
Taiwan
United States > US
ISSN:2079-6412, 2079-6412
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Shrnutí:Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and thermal expansion coefficient. This paper describes the successful hetero-epitaxy of InP on a GaAs substrate by metalorganic chemical vapor deposition. The hetero-epitaxy in this study utilized a hybrid growth method involving a thin indium gallium arsenide (InGaAs) linearly graded buffer, two-step InP growth, and a post-annealing process. Transmission electron microscopic observations showed that a traditional two-step InP/GaAs virtual substrate was smooth but had a high threading dislocation density (TDD) of 1.5 × 109 cm−2 near the InP surface. The high TDD value can be reduced to 2.3 × 108 cm−2 by growing the two-step InP on a thin InGaAs linearly graded buffer. The TDD of an InP/GaAs virtual substrate can be further improved to the value of 1.5 × 107 cm−2 by removing the low-temperature InP nucleation layer and carrying out a post-annealing process. A possible reason for the improvement in TDD may relate to a dislocation interaction such as the annihilation of mobile threading dislocations. Room-temperature photoluminescence spectra of InP/GaAs virtual substrates with different TDD values were compared in this study. The optical and micro-structural characterization results suggest that the proposed growth method may be feasible for making good-quality and relatively low-cost InP/GaAs virtual substrates for the integration of optoelectronic devices on them.
Bibliografia:ObjectType-Article-1
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ObjectType-Feature-2
content type line 14
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings12060723