Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-Zn-O Thin-Film Transistors

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The a...

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Vydáno v:IEEE electron device letters Ročník 32; číslo 11; s. 1552 - 1554
Hlavní autoři: Chen, Wei-Tsung, Lo, Shih-Yi, Kao, Shih-Chin, Zan, Hsiao-Wen, Tsai, Chuang-Chuang, Lin, Jian-Hong, Fang, Chun-Hsiang, Lee, Chung-Chun
Médium: Journal Article
Jazyk:angličtina
Vydáno: New York, NY IEEE 01.11.2011
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:
Annealing
Applied sciences
Bias
Bias stress
Devices
Electronics
Exact sciences and technology
IGZO
Instability
Logic gates
Passivation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stability
Stress
Stresses
Thermal stability
Thin film transistors
Transistors
Amorphous material
Oxygen
Annealing
Electric stress
Gallium oxide
Indium oxide
Relaxation time
Zinc
IGZO
Stress relaxation
Zinc oxide
Thin film transistor
Bias stress
stability
Passivation
ISSN:0741-3106, 1558-0563
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Popis
Shrnutí:This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 × 10 4 and 371 × 10 4 s, respectively, is achieved by annealing and passivation.
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2165694