Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-Zn-O Thin-Film Transistors

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The a...

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Veröffentlicht in:	IEEE electron device letters Jg. 32; H. 11; S. 1552 - 1554
Hauptverfasser:	Chen, Wei-Tsung, Lo, Shih-Yi, Kao, Shih-Chin, Zan, Hsiao-Wen, Tsai, Chuang-Chuang, Lin, Jian-Hong, Fang, Chun-Hsiang, Lee, Chung-Chun
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	New York, NY IEEE 01.11.2011 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:	Annealing Applied sciences Bias Bias stress Devices Electronics Exact sciences and technology IGZO Instability Logic gates Passivation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability Stress Stresses Thermal stability Thin film transistors Transistors Amorphous material Oxygen Annealing Electric stress Gallium oxide Indium oxide Relaxation time Zinc IGZO Stress relaxation Zinc oxide Thin film transistor Bias stress stability Passivation
ISSN:	0741-3106, 1558-0563
Online-Zugang:	Volltext
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