Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-Zn-O Thin-Film Transistors

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The a...

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Published in:	IEEE electron device letters Vol. 32; no. 11; pp. 1552 - 1554
Main Authors:	Chen, Wei-Tsung, Lo, Shih-Yi, Kao, Shih-Chin, Zan, Hsiao-Wen, Tsai, Chuang-Chuang, Lin, Jian-Hong, Fang, Chun-Hsiang, Lee, Chung-Chun
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01.11.2011 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Annealing Applied sciences Bias Bias stress Devices Electronics Exact sciences and technology IGZO Instability Logic gates Passivation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability Stress Stresses Thermal stability Thin film transistors Transistors Amorphous material Oxygen Annealing Electric stress Gallium oxide Indium oxide Relaxation time Zinc IGZO Stress relaxation Zinc oxide Thin film transistor Bias stress stability Passivation
ISSN:	0741-3106, 1558-0563
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Abstract	This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 × 10 4 and 371 × 10 4 s, respectively, is achieved by annealing and passivation.
AbstractList	This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 × 10 4 and 371 × 10 4 s, respectively, is achieved by annealing and passivation. This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of [Formula Omitted] and [Formula Omitted], respectively, is achieved by annealing and passivation. This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of hbox 95 hbox 10 4 and hbox 371 hbox 10 4 Unknown character hbox s , respectively, is achieved by annealing and passivation.
Author	Jian-Hong Lin Wei-Tsung Chen Chun-Hsiang Fang Chung-Chun Lee Hsiao-Wen Zan Shih-Yi Lo Chuang-Chuang Tsai Shih-Chin Kao
Author_xml	– sequence: 1 givenname: Wei-Tsung surname: Chen fullname: Chen, Wei-Tsung – sequence: 2 givenname: Shih-Yi surname: Lo fullname: Lo, Shih-Yi – sequence: 3 givenname: Shih-Chin surname: Kao fullname: Kao, Shih-Chin – sequence: 4 givenname: Hsiao-Wen surname: Zan fullname: Zan, Hsiao-Wen – sequence: 5 givenname: Chuang-Chuang surname: Tsai fullname: Tsai, Chuang-Chuang – sequence: 6 givenname: Jian-Hong surname: Lin fullname: Lin, Jian-Hong – sequence: 7 givenname: Chun-Hsiang surname: Fang fullname: Fang, Chun-Hsiang – sequence: 8 givenname: Chung-Chun surname: Lee fullname: Lee, Chung-Chun
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Snippet	This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and...
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SubjectTerms	Annealing Applied sciences Bias Bias stress Devices Electronics Exact sciences and technology IGZO Instability Logic gates Passivation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability Stress Stresses Thermal stability Thin film transistors Transistors
Title	Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-Zn-O Thin-Film Transistors
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