A low threshold and narrow-beam divergence n-type modulation-doped strained MQW laser array for parallel optical interconnection

It is experimentally demonstrated that low threshold current and narrow beam divergence are achieved in an n-type modulation-doped MQW laser with a laterally tapered active layer on application to parallel optical interconnections.

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Vydáno v:ECOC '98 : 24th European Conference on Optical Communication : co[-]located with, 4th European Exhibition on Optical Communication (EEOC'98), September 20-24, 1998, Madrid, Spain Ročník 1; s. 71 - 72 vol.1
Hlavní autoři: Nakahara, K., Taniwatari, T., Haga, T., Toyonaka, T., Uomi, K.
Médium: Konferenční příspěvek
Jazyk:angličtina
Vydáno: Telefonica 1998
Témata:
Epitaxial layers
Fiber lasers
Laser beams
Laser modes
Optical arrays
Optical interconnections
Power generation
Power lasers
Quantum well devices
Threshold current
ISBN:9788489900141, 8489900140
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Popis
Shrnutí:It is experimentally demonstrated that low threshold current and narrow beam divergence are achieved in an n-type modulation-doped MQW laser with a laterally tapered active layer on application to parallel optical interconnections.
ISBN:9788489900141
8489900140
DOI:10.1109/ECOC.1998.732441