Electrical conductivity and defect disorder of tantalum‐doped TiO2

The present work reports the electrical properties of polycrystalline Ta‐doped TiO2 (0.39 at.% Ta) determined in situ at elevated temperatures (1173‐1323 K) in the gas phase of controlled oxygen activity (10−12 Pa to 105 Pa). The effect of oxygen activity on the electrical conductivity and thermoele...

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Published in:	Journal of the American Ceramic Society Vol. 100; no. 9; pp. 4088 - 4100
Main Authors:	Alim, Mohammad A., Bak, Tadeusz, Atanacio, Armand, Plessis, Johan Du, Zhou, Meifang, Davis, Joel, Nowotny, Janusz
Format:	Journal Article
Language:	English
Published:	Columbus Wiley Subscription Services, Inc 01.09.2017
Subjects:	Compensation Conductivity Defects Electric charge Electrical properties Electrical resistivity Energy levels Enthalpy Oxidation oxides Oxygen Point defects Tantalum Thermoelectricity Titanium dioxide Titanium oxides
ISSN:	0002-7820, 1551-2916
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Abstract	The present work reports the electrical properties of polycrystalline Ta‐doped TiO2 (0.39 at.% Ta) determined in situ at elevated temperatures (1173‐1323 K) in the gas phase of controlled oxygen activity (10−12 Pa to 105 Pa). The effect of oxygen activity on the electrical conductivity and thermoelectric power of TiO2 is discussed in terms of defect disorder, including (1) the intrinsic electronic disorder that is governed by electronic compensation in the strongly reducing regime, (2) the extrinsic electronic disorder that is governed by electronic charge compensation in the reducing regime, and (3) the extrinsic ionic disorder that is governed by ionic compensation in the oxidizing regime. It is shown that tantalum ions are incorporated into the titanium sublattice of TiO2 leading to the formation of donor‐type energy levels. The Arrhenius‐type plot of the electrical conductivity data leads to the determination of the formation enthalpy terms. The obtained results are considered in terms of the effect of tantalum and oxygen activity on the defect disorder and the associated key performance‐related properties in the light‐induced partial water oxidation.
AbstractList	The present work reports the electrical properties of polycrystalline Ta-doped TiO2 (0.39 at.% Ta) determined in situ at elevated temperatures (1173-1323 K) in the gas phase of controlled oxygen activity (10-12 Pa to 105 Pa). The effect of oxygen activity on the electrical conductivity and thermoelectric power of TiO2 is discussed in terms of defect disorder, including (1) the intrinsic electronic disorder that is governed by electronic compensation in the strongly reducing regime, (2) the extrinsic electronic disorder that is governed by electronic charge compensation in the reducing regime, and (3) the extrinsic ionic disorder that is governed by ionic compensation in the oxidizing regime. It is shown that tantalum ions are incorporated into the titanium sublattice of TiO2 leading to the formation of donor-type energy levels. The Arrhenius-type plot of the electrical conductivity data leads to the determination of the formation enthalpy terms. The obtained results are considered in terms of the effect of tantalum and oxygen activity on the defect disorder and the associated key performance-related properties in the light-induced partial water oxidation. The present work reports the electrical properties of polycrystalline Ta‐doped TiO2 (0.39 at.% Ta) determined in situ at elevated temperatures (1173‐1323 K) in the gas phase of controlled oxygen activity (10−12 Pa to 105 Pa). The effect of oxygen activity on the electrical conductivity and thermoelectric power of TiO2 is discussed in terms of defect disorder, including (1) the intrinsic electronic disorder that is governed by electronic compensation in the strongly reducing regime, (2) the extrinsic electronic disorder that is governed by electronic charge compensation in the reducing regime, and (3) the extrinsic ionic disorder that is governed by ionic compensation in the oxidizing regime. It is shown that tantalum ions are incorporated into the titanium sublattice of TiO2 leading to the formation of donor‐type energy levels. The Arrhenius‐type plot of the electrical conductivity data leads to the determination of the formation enthalpy terms. The obtained results are considered in terms of the effect of tantalum and oxygen activity on the defect disorder and the associated key performance‐related properties in the light‐induced partial water oxidation.
Author	Atanacio, Armand Davis, Joel Zhou, Meifang Alim, Mohammad A. Plessis, Johan Du Nowotny, Janusz Bak, Tadeusz
Author_xml	– sequence: 1 givenname: Mohammad A. surname: Alim fullname: Alim, Mohammad A. organization: Western Sydney University – sequence: 2 givenname: Tadeusz surname: Bak fullname: Bak, Tadeusz organization: Western Sydney University – sequence: 3 givenname: Armand surname: Atanacio fullname: Atanacio, Armand organization: Australian Nuclear Science and Technology Organisation – sequence: 4 givenname: Johan Du surname: Plessis fullname: Plessis, Johan Du organization: City Campus – sequence: 5 givenname: Meifang surname: Zhou fullname: Zhou, Meifang organization: The University of Melbourne – sequence: 6 givenname: Joel surname: Davis fullname: Davis, Joel organization: Australian Nuclear Science and Technology Organisation – sequence: 7 givenname: Janusz orcidid: 0000-0002-1822-7508 surname: Nowotny fullname: Nowotny, Janusz email: j.nowotny@westernsydney.edu.au organization: Western Sydney University
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Snippet	The present work reports the electrical properties of polycrystalline Ta‐doped TiO2 (0.39 at.% Ta) determined in situ at elevated temperatures (1173‐1323 K) in... The present work reports the electrical properties of polycrystalline Ta-doped TiO2 (0.39 at.% Ta) determined in situ at elevated temperatures (1173-1323 K) in...
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SubjectTerms	Compensation Conductivity Defects Electric charge Electrical properties Electrical resistivity Energy levels Enthalpy Oxidation oxides Oxygen Point defects Tantalum Thermoelectricity Titanium dioxide Titanium oxides
Title	Electrical conductivity and defect disorder of tantalum‐doped TiO2
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