InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics

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Vydané v:	Nano letters Ročník 11; číslo 11; s. 4831 - 4838
Hlavní autori:	SHIN, Jae Cheol, KIM, Kyou Hyun, KI JUN YU, HEFEI HU, LEIJUN YIN, NING, Cun-Zheng, ROGERS, John A, ZUO, Jian-Min, XIULING LI
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Washington, DC American Chemical Society 09.11.2011
Predmet:	Applied sciences Catalytic methods Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Materials science Methods of nanofabrication Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Gallium Catalysts Epitaxy Photoluminescence Aspect ratio Photovoltaic cell Energy gap Wafers Mismatch lattice Silicon Scanning transmission electron microscopy Current density Solar cells Crystal defects Stacking faults Epitaxial layers Volatile organic compound Indium MOCVD Allotropy AND circuit Operating conditions Dislocations Growth mechanism Heteroepitaxy Nanowires Wide band gap semiconductors Arrays Nanostructured materials
ISSN:	1530-6984
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