InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics

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Podrobná bibliografie
Vydáno v:	Nano letters Ročník 11; číslo 11; s. 4831 - 4838
Hlavní autoři:	SHIN, Jae Cheol, KIM, Kyou Hyun, KI JUN YU, HEFEI HU, LEIJUN YIN, NING, Cun-Zheng, ROGERS, John A, ZUO, Jian-Min, XIULING LI
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Washington, DC American Chemical Society 09.11.2011
Témata:	Applied sciences Catalytic methods Cross-disciplinary physics: materials science; rheology Electronics Exact sciences and technology Materials science Methods of nanofabrication Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Gallium Catalysts Epitaxy Photoluminescence Aspect ratio Photovoltaic cell Energy gap Wafers Mismatch lattice Silicon Scanning transmission electron microscopy Current density Solar cells Crystal defects Stacking faults Epitaxial layers Volatile organic compound Indium MOCVD Allotropy AND circuit Operating conditions Dislocations Growth mechanism Heteroepitaxy Nanowires Wide band gap semiconductors Arrays Nanostructured materials
ISSN:	1530-6984
On-line přístup:	Získat plný text
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Popis
ISSN:	1530-6984
DOI:	10.1021/nl202676b