Gate induced resistive switching in 1T1R structure with improved uniformity and better data retention

Uniformity issue and data retention are two severe challenges for resistive random access memory (RRAM). The wide dispersion of high resistance state (HRS) is the main cause of uniformity issue. In this work, a novel programming scheme named gate induced resistive switching is proposed to improve th...

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Vydáno v:2014 IEEE 6th International Memory Workshop (IMW) s. 1 - 2
Hlavní autoři: Hongtao Liu, Hangbing Lv, Xiaoxin Xu, Ruoyu Liu, Ling Li, Qi Liu, Shibing Long, Yu Wang, Zongliang Huo, Ming Liu
Médium: Konferenční příspěvek
Jazyk:angličtina
Vydáno: IEEE 01.05.2014
Témata:
Electrodes
Hafnium compounds
Logic gates
Power generation
Programming
Resistance
Switches
ISBN:9781479935949, 1479935948
ISSN:2159-483X
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Shrnutí:Uniformity issue and data retention are two severe challenges for resistive random access memory (RRAM). The wide dispersion of high resistance state (HRS) is the main cause of uniformity issue. In this work, a novel programming scheme named gate induced resistive switching is proposed to improve the reliability of RRAM in one transistor and one resistor (1T1R) structure. Owing to the effective elimination of the intermediate resistance states, the uniformity of HRS is greatly improved. Moreover, the new program scheme tends to form single conductive filament (CF) during the SET process. Compared with multi-CFs, the reduced surface area of single-CF for copper ions diffusing from CF leads to better data retention of low resistance state (LRS).
ISBN:9781479935949
1479935948
ISSN:2159-483X
DOI:10.1109/IMW.2014.6849361