A conductive channel size comparison of silicon dielectric and amorphous silicon antifuses

The physical size of an antifuse conductive channel is determined through the electrical characterization by using sidewall antifuse structures. The relationship of a programmed 'ON' antifuse conductive channel size as a function of the programming current is established for both metal-met...

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Veröffentlicht in:	1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers S. 165 - 167
1. Verfasser:	Chen, K.-L.
Format:	Tagungsbericht
Sprache:	Englisch
Veröffentlicht:	IEEE 1993
Schlagworte:	Amorphous silicon Conductivity measurement Current measurement Dielectrics Electrical resistance measurement Functional programming Instruments Kelvin Layout Logic arrays
ISBN:	0780309782, 9780780309784
ISSN:	1524-766X
Online-Zugang:	Volltext
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