Ferroelectric field-effect transistors based on HfO2: a review

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation princi...

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Bibliographic Details

Published in:	Nanotechnology Vol. 32; no. 50
Main Authors:	Mulaosmanovic, Halid, Breyer, Evelyn T, Dünkel, Stefan, Beyer, Sven, Mikolajick, Thomas, Slesazeck, Stefan
Format:	Journal Article
Language:	English
Published:	10.12.2021
ISSN:	1361-6528, 1361-6528
Online Access:	Get more information
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