Photodetector Architecture for Open Circuit Voltage Operation of MWIR InAsSb Detectors

Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discus...

Celý popis

Uloženo v:

Podrobná bibliografie
Vydáno v:	2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) s. 1 - 4
Hlavní autoři:	Specht, Teressa, Taghipour, Zahra, Ronningen, Theodore J., Fragasse, Roman, Tantawy, Ramy, Smith, Shane, Fuller, Earl, Khalil, Waleed, Krishna, Sanjay
Médium:	Konferenční příspěvek
Jazyk:	angličtina
Vydáno:	IEEE 01.08.2019
Témata:	CMOS image sensor technology Computer architecture Detectors Field effect transistors infrared imaging Logic gates mid-wave infrared detectors open circuit voltage Photoconductivity Photodetectors Physics read out integrated circuits
On-line přístup:	Získat plný text
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!

Popis
Shrnutí:	Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discussed.
DOI:	10.1109/RAPID.2019.8864418