Photodetector Architecture for Open Circuit Voltage Operation of MWIR InAsSb Detectors

Unlike conventional detectors that rely on photocurrent, the open circuit voltage photodetector architecture relies on a detector operating in zero bias. The output from the detector is coupled to the gate of a FET in sub-threshold region. Radiometric characterization of this detector will be discus...

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Veröffentlicht in:	2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) S. 1 - 4
Hauptverfasser:	Specht, Teressa, Taghipour, Zahra, Ronningen, Theodore J., Fragasse, Roman, Tantawy, Ramy, Smith, Shane, Fuller, Earl, Khalil, Waleed, Krishna, Sanjay
Format:	Tagungsbericht
Sprache:	Englisch
Veröffentlicht:	IEEE 01.08.2019
Schlagworte:	CMOS image sensor technology Computer architecture Detectors Field effect transistors infrared imaging Logic gates mid-wave infrared detectors open circuit voltage Photoconductivity Photodetectors Physics read out integrated circuits
Online-Zugang:	Volltext
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