Polycrystalline silicon films formation on foreign substrates by a rapid thermal-CVD technique

Deposition of polycrystalline silicon films on foreign substrates, such as silicon dioxide, graphite, alumina and mullite, was performed by means of a lamps heating-assisted CVD technique. We employed a cold wall reactor with a high temperature hydrogen reduction of trichlorosilane (SiHCl/sub 3/) as...

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Vydané v:	Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 s. 627 - 630
Hlavní autori:	Slaoui, A., Monna, R., Angermeier, D., Bourdais, S., Muller, J.C.
Médium:	Konferenčný príspevok..
Jazyk:	English
Vydavateľské údaje:	IEEE 01.01.1997
Predmet:	Epitaxial growth Grain size Hydrogen Inductors Semiconductor films Semiconductor thin films Silicon Substrates Surface morphology Temperature
ISBN:	9780780337671, 0780337670
ISSN:	0160-8371
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