Features of Stress State of Germanium Nanocrystals in SiOx Matrix

Features of mechanical stress in germanium nanocrystals synthesised in amorphous SiOx matrix with SixNy buffer layer were studied by means of Fourier transform infrared absorption spectroscopy, Raman scattering and computer modeling. It was found that the germanium nanocrystals are under significant...

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Vydáno v:Journal of Nano- and Electronic Physics Ročník 7; číslo 1; s. 1029-1 - 01029-5
Hlavní autoři: Kuryliuk, V V, Korotchenkov, O A, Tsybrii, Z F, Nikolenko, A S, Strelchuk, V V
Médium: Journal Article
Jazyk:angličtina
ruština
ukrajinština
Vydáno: Sumy Ukraine Sumy State University, Journal of Nano - and Electronic Physics 01.01.2015
Sumy State University
Témata:
Heterostructur
Mechanical stress
Nanocrystal
Nanocrystals
Quantum dot
ISSN:2077-6772, 2306-4277
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Shrnutí:Features of mechanical stress in germanium nanocrystals synthesised in amorphous SiOx matrix with SixNy buffer layer were studied by means of Fourier transform infrared absorption spectroscopy, Raman scattering and computer modeling. It was found that the germanium nanocrystals are under significant compressive stress with a magnitude of up to 2.9 GPa. Such a high strain value can be explained by a partial penetration of the nanocrystals in the silicon substrate. In this case the principal source of mechanical stress is the lattice mismatch between silicon and germanium.
Bibliografie:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:2077-6772
2306-4277