Enhanced analog switching in Ta2O5/HfO2 bilayer resistive switching device for improved synaptic behavior in neuromorphic computing

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Bibliographic Details
Published in:Current applied physics
Main Authors: Noh, Taehee, Kim, Cheol Jun, Lee, Jae Yeob, Ku, Minkyung, Kim, Tae Hoon, Kang, Minu, Seong, Hyeon Su, Kang, Seung Jin, Kang, Bo Soo
Format: Journal Article
Language:English
Published: 01.11.2025
ISSN:1567-1739
Online Access:Get full text
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ISSN:1567-1739
DOI:10.1016/j.cap.2025.11.006