Towards practical applications of quantum emitters in boron nitride

We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epita...

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Vydáno v:Scientific reports Ročník 11; číslo 1; s. 15506 - 8
Hlavní autoři: Koperski, M., Pakuła, K., Nogajewski, K., Dąbrowska, A. K., Tokarczyk, M., Pelini, T., Binder, J., Fąs, T., Suffczyński, J., Stępniewski, R., Wysmołek, A., Potemski, M.
Médium: Journal Article
Jazyk:angličtina
Vydáno: London Nature Publishing Group UK 29.07.2021
Nature Publishing Group
Nature Portfolio
Témata:
639/301/1019/482
639/301/357/1018
639/301/357/551
639/301/930/1032
639/766/400/3925
639/766/930/328/1978
639/766/930/527/1819
Boron
Crystals
Emissions
Environmental conditions
Humanities and Social Sciences
multidisciplinary
Optical properties
Physics
Polydimethylsiloxane
Science
Science (multidisciplinary)
ISSN:2045-2322, 2045-2322
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Shrnutí:We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.
Bibliografie:ObjectType-Article-1
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-93802-8