Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response

Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations...

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Published in:	Nano-micro letters Vol. 16; no. 1; pp. 213 - 21
Main Authors:	Zeng, Xiaojun, Jiang, Xiao, Ning, Ya, Gao, Yanfeng, Che, Renchao
Format:	Journal Article
Language:	English
Published:	Singapore Springer Nature Singapore 01.12.2024 Springer Nature B.V SpringerOpen
Subjects:	Absorption Built-in electric field Density functional theory Dielectric polarization Electric fields Electrical junctions Electromagnetic radiation Electromagnetic wave absorption Electron transfer Engineering Heterostructures Impedance matching Iron Metal sulfides Military technology Mott–Schottky junctions MXenes Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Radar cross sections Semiconductor junctions Semiconductor–semiconductor–metal heterostructure Stealth technology Thickness Semiconductor–semiconductor–metal heterostructure Electromagnetic wave absorption Built-in electric field Mott–Schottky junctions Semiconductor junctions
ISSN:	2311-6706, 2150-5551, 2150-5551
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Abstract	Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures. The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS 2 , metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor–semiconductor–metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo–MXene/Mo–metal sulfides featuring both semiconductor–semiconductor and semiconductor–metal interfaces. The achievements were most pronounced in Mo–MXene/Mo–Sn sulfide, which achieved remarkable reflection loss values of − 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo–metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.
AbstractList	The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor-semiconductor-metal heterostructure system, Mo-MXene/Mo-metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott-Schottky junctions. By skillfully combining these distinct functional components (Mo-MXene, MoS2, metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces. The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide, which achieved remarkable reflection loss values of - 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor-semiconductor-metal heterostructure system, Mo-MXene/Mo-metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott-Schottky junctions. By skillfully combining these distinct functional components (Mo-MXene, MoS2, metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces. The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide, which achieved remarkable reflection loss values of - 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities. The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS 2 , metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor–semiconductor–metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo–MXene/Mo–metal sulfides featuring both semiconductor–semiconductor and semiconductor–metal interfaces. The achievements were most pronounced in Mo–MXene/Mo–Sn sulfide, which achieved remarkable reflection loss values of − 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo–metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities. Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures. The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS 2 , metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor–semiconductor–metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo–MXene/Mo–metal sulfides featuring both semiconductor–semiconductor and semiconductor–metal interfaces. The achievements were most pronounced in Mo–MXene/Mo–Sn sulfide, which achieved remarkable reflection loss values of − 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo–metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities. HighlightsMo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed.Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching.Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures.The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS2, metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor–semiconductor–metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo–MXene/Mo–metal sulfides featuring both semiconductor–semiconductor and semiconductor–metal interfaces. The achievements were most pronounced in Mo–MXene/Mo–Sn sulfide, which achieved remarkable reflection loss values of − 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo–metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities. Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching. Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures. The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor-semiconductor-metal heterostructure system, Mo-MXene/Mo-metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott-Schottky junctions. By skillfully combining these distinct functional components (Mo-MXene, MoS , metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor-semiconductor-metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo-MXene/Mo-metal sulfides featuring both semiconductor-semiconductor and semiconductor-metal interfaces. The achievements were most pronounced in Mo-MXene/Mo-Sn sulfide, which achieved remarkable reflection loss values of - 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo-metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities. Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed.Built-in electric field are constructed in semiconductor–semiconductor–metal heterostructure, enhancing dielectric polarization and impedance matching.Density functional theory calculations and Radar cross-section simulations confirmed the excellent electromagnetic wave absorption ability of heterostructures. The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption materials. However, the loss mechanism in traditional heterostructures is relatively simple, guided by empirical observations, and is not monotonous. In this work, we presented a novel semiconductor–semiconductor–metal heterostructure system, Mo–MXene/Mo–metal sulfides (metal = Sn, Fe, Mn, Co, Ni, Zn, and Cu), including semiconductor junctions and Mott–Schottky junctions. By skillfully combining these distinct functional components (Mo–MXene, MoS2, metal sulfides), we can engineer a multiple heterogeneous interface with superior absorption capabilities, broad effective absorption bandwidths, and ultrathin matching thickness. The successful establishment of semiconductor–semiconductor–metal heterostructures gives rise to a built-in electric field that intensifies electron transfer, as confirmed by density functional theory, which collaborates with multiple dielectric polarization mechanisms to substantially amplify EMW absorption. We detailed a successful synthesis of a series of Mo–MXene/Mo–metal sulfides featuring both semiconductor–semiconductor and semiconductor–metal interfaces. The achievements were most pronounced in Mo–MXene/Mo–Sn sulfide, which achieved remarkable reflection loss values of − 70.6 dB at a matching thickness of only 1.885 mm. Radar cross-section calculations indicate that these MXene/Mo–metal sulfides have tremendous potential in practical military stealth technology. This work marks a departure from conventional component design limitations and presents a novel pathway for the creation of advanced MXene-based composites with potent EMW absorption capabilities.
ArticleNumber	213
Author	Zeng, Xiaojun Jiang, Xiao Gao, Yanfeng Che, Renchao Ning, Ya
Author_xml	– sequence: 1 givenname: Xiaojun surname: Zeng fullname: Zeng, Xiaojun email: zengxiaojun@jcu.edu.cn organization: School of Materials Science and Engineering, Jingdezhen Ceramic University – sequence: 2 givenname: Xiao surname: Jiang fullname: Jiang, Xiao organization: School of Materials Science and Engineering, Jingdezhen Ceramic University – sequence: 3 givenname: Ya surname: Ning fullname: Ning, Ya organization: School of Materials Science and Engineering, Jingdezhen Ceramic University – sequence: 4 givenname: Yanfeng surname: Gao fullname: Gao, Yanfeng organization: School of Materials Science and Engineering, Jingdezhen Ceramic University, School of Materials Science and Engineering, Shanghai University – sequence: 5 givenname: Renchao surname: Che fullname: Che, Renchao email: rcche@fudan.edu.cn organization: Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering and Technology, Fudan University, Zhejiang Laboratory
BackLink	https://www.ncbi.nlm.nih.gov/pubmed/38861114$$D View this record in MEDLINE/PubMed
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Keywords	Semiconductor–semiconductor–metal heterostructure Electromagnetic wave absorption Built-in electric field Mott–Schottky junctions Semiconductor junctions
Language	English
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PublicationPlace	Singapore
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PublicationTitle	Nano-micro letters
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PublicationYear	2024
Publisher	Springer Nature Singapore Springer Nature B.V SpringerOpen
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Snippet	Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in... The exploration of novel multivariate heterostructures has emerged as a pivotal strategy for developing high-performance electromagnetic wave (EMW) absorption... HighlightsMo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed.Built-in electric field are constructed in... Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed.Built-in electric field are constructed in... Highlights Mo–MXene/Mo–metal sulfides with semiconductor junctions and Mott–Schottky junctions are designed. Built-in electric field are constructed in...
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SubjectTerms	Absorption Built-in electric field Density functional theory Dielectric polarization Electric fields Electrical junctions Electromagnetic radiation Electromagnetic wave absorption Electron transfer Engineering Heterostructures Impedance matching Iron Metal sulfides Military technology Mott–Schottky junctions MXenes Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Radar cross sections Semiconductor junctions Semiconductor–semiconductor–metal heterostructure Stealth technology Thickness
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Title	Constructing Built-In Electric Fields with Semiconductor Junctions and Schottky Junctions Based on Mo–MXene/Mo–Metal Sulfides for Electromagnetic Response
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