Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering

Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that...

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Vydané v:Nature communications Ročník 9; číslo 1; s. 1813 - 8
Hlavní autori: Pan, Hao, Ma, Jing, Ma, Ji, Zhang, Qinghua, Liu, Xiaozhi, Guan, Bo, Gu, Lin, Zhang, Xin, Zhang, Yu-Jun, Li, Liangliang, Shen, Yang, Lin, Yuan-Hua, Nan, Ce-Wen
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: London Nature Publishing Group UK 08.05.2018
Nature Publishing Group
Nature Portfolio
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Bismuth
Bismuth ferrite
Dielectric strength
Efficiency
Electrical insulation
Electricity
Energy storage
Ferroelectric materials
Ferroelectricity
Flux density
Humanities and Social Sciences
Lead free
Lead titanates
multidisciplinary
Power efficiency
Relaxors
Science
Science (multidisciplinary)
Strontium
Strontium titanates
Thermal stability
ISSN:2041-1723, 2041-1723
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Shrnutí:Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm −3 , together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage. Dielectrics with high capacitive energy storage density are essential for modern electrical devices and pulsed power systems. Here, the authors realised superior energy storage performance in lead-free bismuth ferrite-based relaxor ferroelectric films through domain engineering.
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-018-04189-6