Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2) have recently attracted much attention due to their nonzero‐gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2‐based devices...
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| Published in: | Advanced materials (Weinheim) Vol. 28; no. 41; pp. 9024 - 9059 |
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| Main Authors: | , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Germany
Blackwell Publishing Ltd
01.11.2016
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| Subjects: | |
| ISSN: | 0935-9648, 1521-4095, 1521-4095 |
| Online Access: | Get full text |
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| Summary: | Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2) have recently attracted much attention due to their nonzero‐gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2‐based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2 thin layers, and the progress made so far for their doping‐based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped‐MoS2 in industry, as a guide for 2D material community, are also provided.
Various strategies for doping of molybdenum disulfide are comprehensively reviewed, including wet doping and dry doping of MoS2 thin layers and the progress made so far for their doping‐based industrial applications. Finally, a few important opening study directions for future prospects of doped atomically crystalline MoS2 layers in optoelectronics and energy harvesting, as a guide for the 2D material community, are also provided. |
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| Bibliography: | istex:ED25C99A405E150AE5C88D35CC753D40A1CCA451 ark:/67375/WNG-5Q242FLX-K ArticleID:ADMA201506402 Ministry of Education, Science and Technology - No. 2012M3A7B4035323 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 0935-9648 1521-4095 1521-4095 |
| DOI: | 10.1002/adma.201506402 |