Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2) have recently attracted much attention due to their nonzero‐gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2‐based devices...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Advanced materials (Weinheim) Ročník 28; číslo 41; s. 9024 - 9059
Hlavní autoři: Pham, Viet Phuong, Yeom, Geun Young
Médium: Journal Article
Jazyk:angličtina
Vydáno: Germany Blackwell Publishing Ltd 01.11.2016
Témata:
Communities
Crystal structure
Doping
dry doping
Drying
industrial applications
Molybdenum disulfide
MoS2
Optoelectronics
possible element doping
Strategy
Thin films
wet doping
industrial applications
possible element doping
MoS2
dry doping
wet doping
ISSN:0935-9648, 1521-4095, 1521-4095
On-line přístup:Získat plný text
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
Popis
Shrnutí:Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2) have recently attracted much attention due to their nonzero‐gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2‐based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2 thin layers, and the progress made so far for their doping‐based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped‐MoS2 in industry, as a guide for 2D material community, are also provided. Various strategies for doping of molybdenum disulfide are comprehensively reviewed, including wet doping and dry doping of MoS2 thin layers and the progress made so far for their doping‐based industrial applications. Finally, a few important opening study directions for future prospects of doped atomically crystalline MoS2 layers in optoelectronics and energy harvesting, as a guide for the 2D material community, are also provided.
Bibliografie:istex:ED25C99A405E150AE5C88D35CC753D40A1CCA451
ark:/67375/WNG-5Q242FLX-K
ArticleID:ADMA201506402
Ministry of Education, Science and Technology - No. 2012M3A7B4035323
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201506402