Ultra‐Low Current 10 nm Spin Hall Nano‐Oscillators

Nano‐constriction based spin Hall nano‐oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications, such as oscillator‐based neuromorphic computing and Ising Machines. However, their miniaturization to the sub‐50 nm width regime results in poor scaling of...

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Vydané v:	Advanced Materials Ročník 36; číslo 5; s. e2305002 - n/a
Hlavní autori:	Behera, Nilamani, Chaurasiya, Avinash Kumar, González, Victor H., Litvinenko, Artem, Bainsla, Lakhan, Kumar, Akash, Khymyn, Roman, Awad, Ahmad A., Fulara, Himanshu, Åkerman, Johan
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Germany Wiley 01.02.2024 Wiley Subscription Services, Inc
Predmet:	Aluminum oxide Arrays Electrical insulation Electrical resistivity Fysik Ising model Low currents micro-Brillouin light scattering nanoscopic Neural networks Oscillators Physical Sciences Silicon substrates spin Hall nano-oscillators Spintronics Thermal conductivity Threshold currents ultra-low threshold current nanoscopic micro-Brillouin light scattering spin Hall nano-oscillators ultra-low threshold current
ISSN:	0935-9648, 1521-4095, 1521-4095
On-line prístup:	Získať plný text
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