Reversible flexoelectric domain engineering at the nanoscale in van der Waals ferroelectrics
The universal flexoelectric effect in solids provides a mechanical pathway for controlling electric polarization in ultrathin ferroelectrics, eliminating potential material breakdown from a giant electric field at the nanoscale. One challenge of this approach is arbitrary implementation, which is st...
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| Veröffentlicht in: | Nature communications Jg. 15; H. 1; S. 4556 - 9 |
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| Hauptverfasser: | , , , , , |
| Format: | Journal Article |
| Sprache: | Englisch |
| Veröffentlicht: |
London
Nature Publishing Group UK
29.05.2024
Nature Publishing Group Nature Portfolio |
| Schlagworte: | |
| ISSN: | 2041-1723, 2041-1723 |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The universal flexoelectric effect in solids provides a mechanical pathway for controlling electric polarization in ultrathin ferroelectrics, eliminating potential material breakdown from a giant electric field at the nanoscale. One challenge of this approach is arbitrary implementation, which is strongly hindered by one-way switching capability. Here, utilizing the innate flexibility of van der Waals materials, we demonstrate that ferroelectric polarization and domain structures can be mechanically, reversibly, and arbitrarily switched in two-dimensional CuInP
2
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6
via the nano-tip imprinting technique. The bidirectional flexoelectric control is attributed to the extended tip-induced deformation in two-dimensional systems with innate flexibility at the atomic scale. By employing an elastic substrate, artificial ferroelectric nanodomains with lateral sizes as small as ~80 nm are noninvasively generated in an area of 1 μm
2
, equal to a density of 31.4 Gbit/in
2
. Our results highlight the potential applications of van der Waals ferroelectrics in data storage and flexoelectronics.
Flexoelectric effect may offer a voltage-free method to control the polarization in 2D ferroelectrics, but its widespread application remains challenging. Here, the authors report an approach to arbitrarily switch the ferroelectricity in 2D CuInP
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S
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| Bibliographie: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
| ISSN: | 2041-1723 2041-1723 |
| DOI: | 10.1038/s41467-024-48892-z |