Intraband carrier dynamics in Landau-quantized multilayer epitaxial graphene

We investigate the low-energy carrier dynamics in Landau quantized multilayer epitaxial graphene on SiC, using 14 meV photons. The THz absorption is dominated by Landau-level transitions within the conduction bands of several graphene layers with different doping. Varying the magnetic field allows u...

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Bibliographic Details
Published in:New journal of physics Vol. 16; no. 12; pp. 123021 - 9
Main Authors: Mittendorff, Martin, Orlita, Milan, Potemski, Marek, Berger, Claire, de Heer, Walter A, Schneider, Harald, Helm, Manfred, Winnerl, Stephan
Format: Journal Article
Language:English
Published: Bristol IOP Publishing 08.12.2014
Institute of Physics: Open Access Journals
Subjects:
Absorption
carrier dynamics
Carriers
Conduction bands
Dynamic tests
Dynamics
Electron energy
Electrons
Epitaxy
Graphene
magnetic field
Magnetic fields
Multilayers
Physics
Silicon carbide
ISSN:1367-2630, 1367-2630
Online Access:Get full text
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Summary:We investigate the low-energy carrier dynamics in Landau quantized multilayer epitaxial graphene on SiC, using 14 meV photons. The THz absorption is dominated by Landau-level transitions within the conduction bands of several graphene layers with different doping. Varying the magnetic field allows us to tune the THz-induced response from induced transmission around B = 0 to induced absorption at intermediate fields (1.5 T-3.3 T) and back to induced transmission at higher fields (3.3 T-7 T). The main features of this complex response are explained by a strong dependence of the absorption on the electron temperature. Furthermore a prolonged relaxation at high fields, which is attributed to reduced scattering via optical phonons, is observed.
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ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/16/12/123021