Intraband carrier dynamics in Landau-quantized multilayer epitaxial graphene
We investigate the low-energy carrier dynamics in Landau quantized multilayer epitaxial graphene on SiC, using 14 meV photons. The THz absorption is dominated by Landau-level transitions within the conduction bands of several graphene layers with different doping. Varying the magnetic field allows u...
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| Vydáno v: | New journal of physics Ročník 16; číslo 12; s. 123021 - 9 |
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| Hlavní autoři: | , , , , , , , |
| Médium: | Journal Article |
| Jazyk: | angličtina |
| Vydáno: |
Bristol
IOP Publishing
08.12.2014
Institute of Physics: Open Access Journals |
| Témata: | |
| ISSN: | 1367-2630, 1367-2630 |
| On-line přístup: | Získat plný text |
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| Shrnutí: | We investigate the low-energy carrier dynamics in Landau quantized multilayer epitaxial graphene on SiC, using 14 meV photons. The THz absorption is dominated by Landau-level transitions within the conduction bands of several graphene layers with different doping. Varying the magnetic field allows us to tune the THz-induced response from induced transmission around B = 0 to induced absorption at intermediate fields (1.5 T-3.3 T) and back to induced transmission at higher fields (3.3 T-7 T). The main features of this complex response are explained by a strong dependence of the absorption on the electron temperature. Furthermore a prolonged relaxation at high fields, which is attributed to reduced scattering via optical phonons, is observed. |
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| Bibliografie: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
| ISSN: | 1367-2630 1367-2630 |
| DOI: | 10.1088/1367-2630/16/12/123021 |