High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

In this work, the influence of micro- and macro-deformation profiles in GaN nanowires (NWs) on the angular intensity distribution of X-ray diffraction are studied theoretically. The calculations are performed by using kinematical theory of X-ray diffraction and assuming the deformation decays expone...

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Veröffentlicht in:	Nanoscale research letters Jg. 10; H. 1; S. 51
Hauptverfasser:	Stanchu, Hryhorii, Kladko, Vasyl, Kuchuk, Andrian V, Safriuk, Nadiia, Belyaev, Alexander, Wierzbicka, Aleksandra, Sobanska, Marta, Klosek, Kamil, Zytkiewicz, Zbigniew R
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Boston Springer US 06.02.2015 Springer Nature B.V
Schlagworte:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Nanotechnology and nanomaterials (NANO-2014) Nanowires Self-assembly Silicon substrates Strain analysis Strain distribution X-ray diffraction X-ray scattering Deformation Nanowires Kinematical theory GaN X-ray diffraction profile
ISSN:	1931-7573, 1556-276X
Online-Zugang:	Volltext
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