Single Crystal-Like Performance in Solution-Coated Thin-Film Organic Field-Effect Transistors

In electronics, the field‐effect transistor (FET) is a crucial cornerstone and successful integration of this semiconductor device into circuit applications requires stable and ideal electrical characteristics over a wide range of temperatures and environments. Solution processing, using printing or...

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Vydáno v:	Advanced functional materials Ročník 26; číslo 14; s. 2379 - 2386
Hlavní autoři:	del Pozo, Freddy G., Fabiano, Simone, Pfattner, Raphael, Georgakopoulos, Stamatis, Galindo, Sergi, Liu, Xianjie, Braun, Slawomir, Fahlman, Mats, Veciana, Jaume, Rovira, Concepció, Crispin, Xavier, Berggren, Magnus, Mas-Torrent, Marta
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Blackwell Publishing Ltd 12.04.2016
Témata:	charge carrier mobility Circuits Coating device stability Devices Electric fields Electronics Field effect transistors Inverters Organic field-effect transistors Semiconductor devices temperature-independent transport Thin films thin-film coating
ISSN:	1616-301X, 1616-3028, 1616-3028
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Shrnutí:	In electronics, the field‐effect transistor (FET) is a crucial cornerstone and successful integration of this semiconductor device into circuit applications requires stable and ideal electrical characteristics over a wide range of temperatures and environments. Solution processing, using printing or coating techniques, has been explored to manufacture organic field‐effect transistors (OFET) on flexible carriers, enabling radically novel electronics applications. Ideal electrical characteristics, in organic materials, are typically only found in single crystals. Tiresome growth and manipulation of these hamper practical production of flexible OFETs circuits. To date, neither devices nor any circuits, based on solution‐processed OFETs, has exhibited an ideal set of characteristics similar or better than today's FET technology based on amorphous silicon. Here, bar‐assisted meniscus shearing of dibenzo‐tetrathiafulvalene to coat‐process self‐organized crystalline organic semiconducting domains with high reproducibility is reported. Including these coatings as the channel in OFETs, electric field and temperature‐independent charge carrier mobility and no bias stress effects are observed. Furthermore, record‐high gain in OFET inverters and exceptional operational stability in both air and water are measured. Bar‐assisted meniscus shearing of dibenzo‐tetrathiafulvalene is used to coat‐process self‐organized crystalline organic semiconducting domains with high reproducibility for organic field‐effect transistors (OFETs). Electric field and temperature‐independent charge carrier mobility as well as no bias stress effects are observed in these devices. A record‐high gain in OFET inverters and exceptional operational stability in both air and water is demonstrated.
Bibliografie:	Swedish Foundation for Strategic Research ark:/67375/WNG-45K75KZQ-R Önnesjö Foundation Knut and Alice Wallenberg Foundation istex:7AF9A212B604C4927A9E0E8A7057DB8BCA10281B ArticleID:ADFM201502274 Universidad Técnica de Ambato Advanced Functional Materials Center at Linköping University Secretaría de Educación Superior, Ciencia, Tecnología e Innovación ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1616-301X 1616-3028 1616-3028
DOI:	10.1002/adfm.201502274