Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy
Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintain...
Uloženo v:
| Vydáno v: | E-journal of surface science and nanotechnology Ročník 9; s. 117 - 121 |
|---|---|
| Hlavní autoři: | , , , , |
| Médium: | Journal Article |
| Jazyk: | angličtina |
| Vydáno: |
Tokyo
The Japan Society of Vacuum and Surface Science
01.01.2011
Japan Science and Technology Agency |
| Témata: | |
| ISSN: | 1348-0391, 1348-0391 |
| On-line přístup: | Získat plný text |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|
| Shrnutí: | Variations of the electrostatic potential were investigated for oxide-passivated n-Si(111) surfaces with atomically flat terraces by measuring the force acting on an ultra-sharp tungsten probe that was attached to the quartz resonator of an atomic force microscope. When the probe-sample gap maintained a constant tunneling current, an enhancement of electrostatic force with a lateral extent of ∼5 nm was observed around underlying donor atoms and charged defects. Additional variations of the surface potential and the probe-sample capacitance across the surface steps were associated with excess electric charge at the step edge. [DOI: 10.1380/ejssnt.2011.117] |
|---|---|
| Bibliografie: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| ISSN: | 1348-0391 1348-0391 |
| DOI: | 10.1380/ejssnt.2011.117 |