Electrical properties of staggered electrode, solution-processed, polycrystalline tetrabenzoporphyrin field-effect transistors

We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10/sup -2/ cm/s...

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Bibliographic Details
Published in:IEEE Transactions on Electron Devices Vol. 52; no. 7; pp. 1497 - 1503
Main Authors: Shea, P.B., Johnson, A.R., Ono, N., Kanicki, J.
Format: Journal Article
Language:English
Published: New York, NY IEEE 01.07.2005
Institute of Electrical and Electronics Engineers (IEEE)
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Absorbance
Applied sciences
Charge carrier mobility
cyclic voltammetry
Devices
Drains
Electrical properties
Electrodes
Electronics
Energy bands
Exact sciences and technology
FETs
Molecular electronics
Organic compounds
organic field-effect transistors (OFETs)
porphyrins
Semiconductor device testing
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
solution processing
staggered electrodes
Thin film transistors
Thin films
Transistors
Performance evaluation
Voltage threshold
organic field-effect transistors (OFETs)
staggered electrodes
Polycrystal
Energy band
Energy diagram
porphyrins
Thin film
Field effect transistor
Cyclic voltammetry
Absorbance
solution processing
Electronic component
Organic semiconductors
Thin film transistor
Electrical characteristic
ISSN:0018-9383, 1557-9646
Online Access:Get full text
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Description
Summary:We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10/sup -2/ cm/sup 2//V-s and -15 V, respectively, as well as a subthreshold slope of 1.2 V/decade and an ON-/OFF-current ratio exceeding 10/sup 5/. The device performance and electronic properties of the thin film were used to construct device energy band diagrams. Lastly, the device conduction mechanism is discussed.
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.850616