Electrical properties of staggered electrode, solution-processed, polycrystalline tetrabenzoporphyrin field-effect transistors

We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10/sup -2/ cm/s...

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Vydáno v:	IEEE Transactions on Electron Devices Ročník 52; číslo 7; s. 1497 - 1503
Hlavní autoři:	Shea, P.B., Johnson, A.R., Ono, N., Kanicki, J.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York, NY IEEE 01.07.2005 Institute of Electrical and Electronics Engineers (IEEE) Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Absorbance Applied sciences Charge carrier mobility cyclic voltammetry Devices Drains Electrical properties Electrodes Electronics Energy bands Exact sciences and technology FETs Molecular electronics Organic compounds organic field-effect transistors (OFETs) porphyrins Semiconductor device testing Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solution processing staggered electrodes Thin film transistors Thin films Transistors Performance evaluation Voltage threshold organic field-effect transistors (OFETs) staggered electrodes Polycrystal Energy band Energy diagram porphyrins Thin film Field effect transistor Cyclic voltammetry Absorbance solution processing Electronic component Organic semiconductors Thin film transistor Electrical characteristic
ISSN:	0018-9383, 1557-9646
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Popis
Shrnutí:	We characterize and analyze the electrical performance of solution-processed, polycrystalline tetrabenzoporphyrin thin-film field-effect transistors with staggered source and drain contacts. Devices demonstrated a saturation field-effect mobility and threshold voltage on the order of 10/sup -2/ cm/sup 2//V-s and -15 V, respectively, as well as a subthreshold slope of 1.2 V/decade and an ON-/OFF-current ratio exceeding 10/sup 5/. The device performance and electronic properties of the thin film were used to construct device energy band diagrams. Lastly, the device conduction mechanism is discussed.
Bibliografie:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 14 ObjectType-Article-1 ObjectType-Feature-2 content type line 23
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2005.850616