Efficiency droop in nitride-based light-emitting diodes

Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN‐based LEDs. Several explana...

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Vydané v:	Physica status solidi. A, Applications and materials science Ročník 207; číslo 10; s. 2217 - 2225
Hlavný autor:	Piprek, Joachim
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Berlin WILEY-VCH Verlag 01.10.2010 WILEY‐VCH Verlag Wiley-VCH
Predmet:	Applied sciences Auger recombination efficiency droop Electronics Exact sciences and technology GaN light-emitting diodes Optoelectronic devices quantum efficiency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Band structure Electron-hole recombination Spontaneous emission Radiative recombination Defect Mathematical model Quantum yield Gallium nitride Auger recombination Light emitting diode
ISSN:	1862-6300, 1862-6319
On-line prístup:	Získať plný text
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