A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses

Herein, physical reservoir computing with a redox‐based ion‐gating reservoir (redox‐IGR) comprising Li x WO 3 thin film and lithium‐ion conducting glass ceramic (LICGC) is demonstrated. The subject redox‐IGR successfully solves a second‐order nonlinear dynamic equation by utilizing voltage pulse dri...

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Vydané v:	Advanced intelligent systems Ročník 5; číslo 9
Hlavní autori:	Wada, Tomoki, Nishioka, Daiki, Namiki, Wataru, Tsuchiya, Takashi, Higuchi, Tohru, Terabe, Kazuya
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Weinheim John Wiley & Sons, Inc 01.09.2023 Wiley
Predmet:	all-solid-state Autoregressive moving average Computation Electrodes Electrolytes Errors Glass ceramics Integrated circuits ion-gating reservoir ion-gating transistor lithium ion Lithium ions Memory tasks nanoionics neuromorphic Nonlinear dynamics Nonlinear response Pattern recognition Thin films Transistors
ISSN:	2640-4567, 2640-4567
On-line prístup:	Získať plný text
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