APA (7th ed.) Citation

Xue, F., He, X., Retamal, J. R. D., Han, A., Zhang, J., Liu, Z., . . . Zhang, X. (2019). Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric. Advanced materials (Weinheim), 31(29), e1901300-n/a. https://doi.org/10.1002/adma.201901300

Chicago Style (17th ed.) Citation

Xue, Fei, et al. "Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric." Advanced Materials (Weinheim) 31, no. 29 (2019): e1901300-n/a. https://doi.org/10.1002/adma.201901300.

MLA (9th ed.) Citation

Xue, Fei, et al. "Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric." Advanced Materials (Weinheim), vol. 31, no. 29, 2019, pp. e1901300-n/a, https://doi.org/10.1002/adma.201901300.