Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Advanced materials (Weinheim) Ročník 31; číslo 29; s. e1901300 - n/a
Hlavní autoři: Xue, Fei, He, Xin, Retamal, José Ramón Durán, Han, Ali, Zhang, Junwei, Liu, Zhixiong, Huang, Jing‐Kai, Hu, Weijin, Tung, Vincent, He, Jr‐Hau, Li, Lain‐Jong, Zhang, Xixiang
Médium: Journal Article
Jazyk:angličtina
Vydáno: Germany Wiley Subscription Services, Inc 01.07.2019
Témata:
Ferroelectric materials
Ferroelectricity
ferroelectrics
gate tunability
Logic circuits
Materials science
Memory devices
Memristors
multidirectional programming
Photoelectric effect
Photoelectric emission
Polarization
Resistance
Switching
Synapses
memristors
ferroelectrics
multidirectional programming
gate tunability
ISSN:0935-9648, 1521-4095, 1521-4095
On-line přístup:Získat plný text
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
Popis
Shrnutí:Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α‐In2Se3, a semiconducting van der Waals ferroelectric material. The planar memristor based on in‐plane (IP) polarization of α‐In2Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance‐switching ratio. The integration of vertical α‐In2Se3 memristors based on out‐of‐plane (OOP) polarization is demonstrated with a device density of 7.1 × 109 in.−2 and a resistance‐switching ratio of well over 103. A multidirectionally operated α‐In2Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric α‐In2Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing. Gate‐tunable and multidirection‐switchable memristive phenomena in a van der Waals ferroelectric α‐In2Se3 are demonstrated. The planar memristor exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance‐switching ratio. A multidirectionally operated α‐In2Se3 memristor is also proposed, enabling the control of the out‐of‐plane (OOP) (or in‐plane (IP)) resistance state directly by an IP (or OOP) programming pulse.
Bibliografie:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.201901300