Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a...

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Published in:Physical review letters Vol. 117; no. 26; p. 267201
Main Authors: He, Junfeng, Zhang, Chaofan, Ghimire, Nirmal J., Liang, Tian, Jia, Chunjing, Jiang, Juan, Tang, Shujie, Chen, Sudi, He, Yu, Mo, S.-K., Hwang, C. C., Hashimoto, M., Lu, D. H., Moritz, B., Devereaux, T. P., Chen, Y. L., Mitchell, J. F., Shen, Z.-X.
Format: Journal Article
Language:English
Published: United States 23.12.2016
Subjects:
Compensation
Electronic structure
Hole mobility
Magnetoresistance
Magnetoresistivity
Metalloids
Spectroscopy
Topology
ISSN:0031-9007, 1079-7114
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Abstract An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
AbstractList An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
ArticleNumber 267201
Author Jiang, Juan
Chen, Sudi
Zhang, Chaofan
Jia, Chunjing
Mitchell, J. F.
Liang, Tian
Chen, Y. L.
Shen, Z.-X.
Moritz, B.
He, Junfeng
Devereaux, T. P.
He, Yu
Hwang, C. C.
Hashimoto, M.
Mo, S.-K.
Tang, Shujie
Ghimire, Nirmal J.
Lu, D. H.
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Snippet An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates...
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SubjectTerms Compensation
Electronic structure
Hole mobility
Magnetoresistance
Magnetoresistivity
Metalloids
Spectroscopy
Topology
Title Distinct Electronic Structure for the Extreme Magnetoresistance in YSb
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