A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which ha...

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Vydané v:Journal of materials research Ročník 36; číslo 1; s. 235 - 257
Hlavný autor: Seo, Jihoon
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Cham Springer International Publishing 15.01.2021
Springer Nature B.V
Predmet:
Applied and Technical Physics
Biomaterials
Chemical reactions
Chemical-mechanical polishing
Chemistry and Materials Science
Inorganic Chemistry
Integrated circuits
Materials Engineering
Materials research
Materials Science
Nanotechnology
Review
Slurries
Temperature effects
chemical reaction
adsorption
corrosion
dispersant
CMP (chemical mechanical polishing)
ISSN:0884-2914, 2044-5326
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Popis
Shrnutí:As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which has continued to lag behind advances in technology. This review paper provides a comprehensive overview of various chemical and mechanical phenomena such as contact mechanics, lubrication models, chemical reaction that occur between slurry components and films being polished, electrochemical reactions, adsorption behavior and mechanism, temperature effects, and the complex interactions occurring at the wafer interface during polishing. It also provides important insights into new strategies and novel concepts for next‐generation CMP slurries. Finally, the challenges and future research directions related to the chemical and mechanical process and slurry chemistry are highlighted.
Bibliografia:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0884-2914
2044-5326
DOI:10.1557/s43578-020-00060-x