Intermolecular Hybridization Governs Molecular Electrical Doping

Current models for molecular electrical doping of organic semiconductors are found to be at odds with other well-established concepts in that field, like polaron formation. Addressing these inconsistencies for prototypical systems, we present experimental and theoretical evidence for intermolecular...

Celý popis

Uložené v:
Podrobná bibliografia
Vydané v:Physical review letters Ročník 108; číslo 3; s. 035502
Hlavní autori: Salzmann, Ingo, Heimel, Georg, Duhm, Steffen, Oehzelt, Martin, Pingel, Patrick, George, Benjamin M., Schnegg, Alexander, Lips, Klaus, Blum, Ralf-Peter, Vollmer, Antje, Koch, Norbert
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: United States 18.01.2012
ISSN:0031-9007, 1079-7114, 1079-7114
On-line prístup:Získať plný text
Tagy: Pridať tag
Žiadne tagy, Buďte prvý, kto otaguje tento záznam!
Popis
Shrnutí:Current models for molecular electrical doping of organic semiconductors are found to be at odds with other well-established concepts in that field, like polaron formation. Addressing these inconsistencies for prototypical systems, we present experimental and theoretical evidence for intermolecular hybridization of organic semiconductor and dopant frontier molecular orbitals. Common doping-related observations are attributed to this phenomenon, and controlling the degree of hybridization emerges as a strategy for overcoming the present limitations in the yield of doping-induced charge carriers.
Bibliografia:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0031-9007
1079-7114
1079-7114
DOI:10.1103/PhysRevLett.108.035502