Graphene based quantum dots

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array wit...

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Vydáno v:Journal of physics. Condensed matter Ročník 22; číslo 30; s. 302001
Hlavní autoři: Zhang, H G, Hu, H, Pan, Y, Mao, J H, Gao, M, Guo, H M, Du, S X, Greber, T, Gao, H-J
Médium: Journal Article
Jazyk:angličtina
Vydáno: England 04.08.2010
ISSN:1361-648X, 1361-648X
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Shrnutí:Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.
Bibliografie:ObjectType-Article-1
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ISSN:1361-648X
1361-648X
DOI:10.1088/0953-8984/22/30/302001