Behavioral Thermal Modeling for Microwave Power Amplifier Design

System-level models simplify the analysis of complex RF systems, such as transmission-reception modules, by expressing global input-output relationships. However, the development of high RF power models for nonlinear subsystems requires the prediction of the distortion induced by low-frequency memor...

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Vydáno v:	IEEE transactions on microwave theory and techniques Ročník 55; číslo 11; s. 2290 - 2297
Hlavní autoři:	Mazeau, J., Sommet, R., Caban-Chastas, D., Gatard, E., Quere, R., Mancuso, Y.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York, NY IEEE 01.11.2007 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Amplifiers Applied sciences Behavioral electrothermal (BET) model Circuit properties Circuits Computer simulation Coupling circuits Design engineering Distortion Electric, optical and optoelectronic circuits Electronic circuits Electronics Electrothermal effects Engineering Sciences Exact sciences and technology Mathematical models Micro and nanotechnologies Microelectronics Microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Nonlinear distortion power amplifier Power amplifiers Power system modeling Predictive models Pulse amplifiers Radio frequencies Radio frequency Radiofrequency amplifiers reduced thermal model Ritz vector approach system-level model Theoretical study. Circuits analysis and design Volterra series power amplifier Behavioral electrothermal (BET) model Ritz vector approach Volterra series reduced thermal model system-level model Complex system Temperature effect Low frequency Electrical model Modeling Frequency effect Implementation Behavioral analysis Subsystem Self heating Transient analysis Microwave power amplifiers system- level model Circuit simulation Thermal behavior Transistor RF systems Behavior model High power Power amplifier Memory effect Thermal model system-level models microwave power amplifier design circuit simulation transmission-reception modules microwave power amplifiers low-frequency memory effects behavioral thermal modeling circuit CAD electrothermal behavioral model circuit simulator self-heating effects
ISSN:	0018-9480, 1557-9670
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Popis
Shrnutí:	System-level models simplify the analysis of complex RF systems, such as transmission-reception modules, by expressing global input-output relationships. However, the development of high RF power models for nonlinear subsystems requires the prediction of the distortion induced by low-frequency memory effects such as self-heating effects. In this framework, we present a new electrothermal behavioral model for power amplifiers. This global model is based on the coupling between a behavioral electrical model derived from the transistor-level description of the amplifier and a thermal reduced model. This model, implemented into a circuit simulator, allows to predict the impact of the thermal effects in pulsed RF mode thanks to an envelope transient analysis. This approach has also been validated by measurements.
Bibliografie:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 14 content type line 23
ISSN:	0018-9480 1557-9670
DOI:	10.1109/TMTT.2007.907715