Behavioral Thermal Modeling for Microwave Power Amplifier Design

System-level models simplify the analysis of complex RF systems, such as transmission-reception modules, by expressing global input-output relationships. However, the development of high RF power models for nonlinear subsystems requires the prediction of the distortion induced by low-frequency memor...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques Jg. 55; H. 11; S. 2290 - 2297
Hauptverfasser: Mazeau, J., Sommet, R., Caban-Chastas, D., Gatard, E., Quere, R., Mancuso, Y.
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York, NY IEEE 01.11.2007
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:
Amplifiers
Applied sciences
Behavioral electrothermal (BET) model
Circuit properties
Circuits
Computer simulation
Coupling circuits
Design engineering
Distortion
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Electrothermal effects
Engineering Sciences
Exact sciences and technology
Mathematical models
Micro and nanotechnologies
Microelectronics
Microwave amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
Nonlinear distortion
power amplifier
Power amplifiers
Power system modeling
Predictive models
Pulse amplifiers
Radio frequencies
Radio frequency
Radiofrequency amplifiers
reduced thermal model
Ritz vector approach
system-level model
Theoretical study. Circuits analysis and design
Volterra series
power amplifier
Behavioral electrothermal (BET) model
Ritz vector approach
Volterra series
reduced thermal model
system-level model
Complex system
Temperature effect
Low frequency
Electrical model
Modeling
Frequency effect
Implementation
Behavioral analysis
Subsystem
Self heating
Transient analysis
Microwave power amplifiers
system- level model
Circuit simulation
Thermal behavior
Transistor
RF systems
Behavior model
High power
Power amplifier
Memory effect
Thermal model
system-level models
microwave power amplifier design
circuit simulation
transmission-reception modules
microwave power amplifiers
low-frequency memory effects
behavioral thermal modeling
circuit CAD
electrothermal behavioral model
circuit simulator
self-heating effects
ISSN:0018-9480, 1557-9670
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Beschreibung
Zusammenfassung:System-level models simplify the analysis of complex RF systems, such as transmission-reception modules, by expressing global input-output relationships. However, the development of high RF power models for nonlinear subsystems requires the prediction of the distortion induced by low-frequency memory effects such as self-heating effects. In this framework, we present a new electrothermal behavioral model for power amplifiers. This global model is based on the coupling between a behavioral electrical model derived from the transistor-level description of the amplifier and a thermal reduced model. This model, implemented into a circuit simulator, allows to predict the impact of the thermal effects in pulsed RF mode thanks to an envelope transient analysis. This approach has also been validated by measurements.
Bibliographie:ObjectType-Article-2
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ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2007.907715