Monolithic integration of four-colour InGaN-based nanocolumn LEDs

The monolithic integration of four-colour indium gallium nitride (InGaN)-based nanocolumn light-emitting diodes (LEDs) is demonstrated. In the integrated nanocolumn LED unit, blue-, sky-blue-, green- and yellow-emitting micro-LEDs (LEDs 1–4) with a 65 μm diameter circular indium tin oxide emission w...

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Vydáno v:	Electronics letters Ročník 51; číslo 11; s. 852 - 854
Hlavní autoři:	Kishino, K, Yanagihara, A, Ikeda, K, Yamano, K
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	The Institution of Engineering and Technology 28.05.2015
Témata:	Arrays blue‐emitting microLED circular indium tin oxide emission window Emission four‐colour InGaN‐based nanocolumn LED gallium compounds Gallium nitrides green‐emitting microLED III‐V semiconductors indium compounds Indium gallium nitrides InGaN‐GaN integrated optoelectronics ITO lattice constant lattice constants Lattice parameters Lattices Light-emitting diodes monolithic integration multiple quantum wells nanoelectronics Nanostructure Photonics semiconductor quantum wells size 65 mum to 231 nm sky‐blue‐emitting microLED triangular lattice wide band gap semiconductors yellow‐emitting microLED gallium compounds multiple quantum wells ITO monolithic integration lattice constant indium compounds integrated optoelectronics light-emitting diodes lattice constants blue-emitting microLED light emitting diodes four-colour InGaN-based nanocolumn LED InGaN-GaN circular indium tin oxide emission window triangular lattice semiconductor quantum wells yellow-emitting microLED nanoelectronics wide band gap semiconductors sky-blue-emitting microLED green-emitting microLED size 65 mum to 231 nm III-V semiconductors
ISSN:	0013-5194, 1350-911X, 1350-911X
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Shrnutí:	The monolithic integration of four-colour indium gallium nitride (InGaN)-based nanocolumn light-emitting diodes (LEDs) is demonstrated. In the integrated nanocolumn LED unit, blue-, sky-blue-, green- and yellow-emitting micro-LEDs (LEDs 1–4) with a 65 μm diameter circular indium tin oxide emission window were arrayed in a 2 × 2 square lattice with a lattice constant of 190 μm. LEDs 1–4 consisted of nanocolumn arrays arranged in a triangular lattice with a lattice constant of 300 nm and their nanocolumn diameters at the position of the InGaN/gallium nitride (GaN) multiple quantum wells (MQWs) were 119, 145, 188 and 231 nm, respectively. The increase in nanocolumn diameter from LED 1 to LED 4 resulted in increasing emission peak wavelengths, which were 465, 489, 510 and 570 nm for LEDs 1–4, respectively. On the same substrate, a red-emitting micro-LED was prepared, in which the nanocolumn diameter was increased to 260 nm by using a 350 nm-lattice-constant nanocolumn array. A combination of different lattice constants in an integrated LED unit is expected to contribute to the achievement of red–green–blue–yellow (RGBY)-colour-integrated nanocolumn LEDs.
Bibliografie:	K. Kishino: Also with the Sophia Nanotechnology Research Center, Sophia University, Tokyo, Japan ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2015.0770