Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and high-speed writing/reading. Moreover, STT-MRAM is...

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Veröffentlicht in:	IEEE access Jg. 11; S. 33005 - 33013
Hauptverfasser:	Nguyen, Thien An, Lee, Jaejin
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Piscataway IEEE 2023 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:	Artificial intelligence Bit error rate Cascaded channel model Codes Coding Dynamic random access memory error correction codes (ECCs) Errors Fluctuations Internet of Things Magnetic tunneling Magnetohydrodynamics Modulation modulation coding non-volatile RAM Random access memory Resistance sparse codes spin-torque transfer magnetic random-access memory (STT-MRAM) Torque Tunnel junctions Writing
ISSN:	2169-3536, 2169-3536
Online-Zugang:	Volltext
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