Ultrafast Plasmon Thermalization in Epitaxial Graphene Probed by Time‐Resolved THz Spectroscopy

The control of carrier transport by electrical, chemical, or optical Fermi level tuning is central to graphene electronics. Here, an optical pump—terahertz (THz) probe spectroscopy—is applied to investigate ultrafast sheet conductivity dynamics in various epitaxially grown graphene layers representi...

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Vydané v:	Advanced functional materials Ročník 31; číslo 45
Hlavní autori:	Paingad, Vaisakh C., Kunc, Jan, Rejhon, Martin, Rychetský, Ivan, Mohelský, Ivan, Orlita, Milan, Kužel, Petr
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Hoboken Wiley Subscription Services, Inc 01.11.2021 Wiley
Predmet:	Allotropy carrier cooling Carrier mobility Carrier transport Chemical potential Condensed Matter Confinement Cooling epitaxial graphene Epitaxial growth Fermi level Graphene Graphical representations localized plasmon Materials Science Physics Plasmonics sheet conductivity Spectroscopy Spectrum analysis Substrates terahertz Thermalization (energy absorption) ultrafast thermalization dynamics localized plasmon Fermi level terahertz epitaxial graphene sheet conductivity carrier cooling ultrafast
ISSN:	1616-301X, 1616-3028
On-line prístup:	Získať plný text
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